FDP51N25_08 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
• 51A, 250V, R_DS(on) = 0.06Ω @V_GS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 63 pF)
• Fast switching
• Improved dv/dt capability
July 2008
UniFET^TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP51N25 FDPF51N25
250
51
51*
30
30*
204
204*
± 30
1111
51
32
4.5
320
38
3.7
0.3
-55 to +150
300
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP51N25
0.39
0.5
62.5
FDPF51N25
3.3
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/WJ
©2008 Fairchild Semiconductor Corporation
1
FDP51N25 / FDPF51N25 Rev. B
www.fairchildsemi.com