FDP4020P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

February 1999
PRELIMINARY
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
Features
• -16 A, -20 V. R_DS(on) = 0.08 Ω @ V_GS = -4.5 V
R_DS(on) = 0.11 Ω @ V_GS = -2.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• High density cell design for extremely low R_DS(on).
• TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
• 175°C maximum junction temperature rating.
S
G
D
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
FDP4020P FDB4020P
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
- Pulsed
PD
Total Power Dissipation @ TC = 25_°C
TJ, TSTG
Derate above 25_°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
-20
±⁸
-16
-48
37.5
0.25
-65 to +175
4
62.5
40
Units
V
V
A
W
W/_°C
°^C
°^C/W
°^C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDP4020P
FDP4020P
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDP4020P Rev. A