FDP3205 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ

May 2008
FDP3205
N-Channel PowerTrench^® MOSFET
55V, 100A, 7.5mΩ
Features
• R_DS(on) = 6.1mΩ ( Typ.)@ V_GS = 10V, I_D = 59A
• High performance trench technology for extermly low R_DS(on)
• High power and current handing capability
• RoHS compliant
Description
• This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
D
G
TO-220
GDS
FDP Series
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
S
Ratings
55
±20
100
390
365
150
1.0
-55 to +175
Ratings
1.0
62.5
Units
V
V
A
A
mJ
W
W/^oC
o_C
Units
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FDP3205 Rev. A
www.fairchildsemi.com