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| FDP2710_F085 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET | |||
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February 2010
FDP2710_F085
N-Channel PowerTrench® MOSFET
250V, 50A, 47mâ¦
Features
 Typ rDS(on) = 38m⦠at VGS = 10V, ID = 50A
 Typ Qg(TOT) = 78nC at VGS = 10V
 Fast switching speed
 Low gate charge
 High performance trench technology for extremely low
RDS(on)
 High power and current handling capability
 Qualified to AEC Q101
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchil Semi-
conductorâs advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
 PDP application
 Hybrid Electric Vehicle DC/DC converters
©2010 Fairchild Semiconductor Corporation
1
FDP2710_F085 Rev. A
www.fairchildsemi.com
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