FDP2710 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 250V N-Channel PowerTrench MOSFET

November 2007
FDP2710
tm
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• PDP application
Description
• 50A, 250V, R_DS(on) = 36.3mΩ @V_GS = 10 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handling capability
• RoHS compliant
D
GDS
TO-220
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Gate-Source voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
Ratings
250
± 30
50
31.3
See Figure 9
145
4.5
260
2.1
-55 to +150
300
Min
--
--
Max
0.48
62.5
Unit
V
V
A
A
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FDP2710 Rev. A
www.fairchildsemi.com