FDP2670 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET

November 2001
FDP2670/FDB2670
200V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 200V MOSFETs with low on-resistance and
fast switching will benefit.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge (27 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
dv/dt
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Peak Diode Recovery dv/dt
(Note 3)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB2670
FDB2670
13’’
FDP2670
FDP2670
Tube
G
Ratings
200
± 20
19
40
93
0.63
3.2
–65 to +175
1.6
62.5
Tape width
24mm
n/a
S
Units
V
V
A
A
W
W°/C
V/ns
°C
°C/W
°C/W
Quantity
800 units
45 units
2001 Fairchild Semiconductor Corporation
FDP2670/FDB2670 Rev C1(W)