FDP2572_12 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

FDB2572
N-Channel PowerTrench^® MOSFET
150V, 29A, 54mΩ
Features
• r_DS(ON) = 45mΩ (Typ.), V_GS = 10V, I_D = 9A
• Q_g(tot) = 26nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
January 2012
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
Formerly developmental type 82860
DRAIN
D
(FLANGE)
GATE
SOURCE
G
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V, R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case, TO-263
Thermal Resistance Junction to Ambient , TO-263
(Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
Ratings
150
±20
29
20
4
Figure 4
36
135
0.9
-55 to 175
1.11
62
43
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
©2012 Fairchild Semiconductor Corporation
FDB2572 Rev. C