FDP15N65 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 650V N-Channel MOSFET

FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
• 15A, 650V, R_DS(on) = 0.44Ω @V_GS = 10 V
• Low gate charge ( typical 48.5 nC)
• Low C_rss ( typical 23.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2006
UniFET ^TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
FDP15N65 FDPF15N65
650
15
15*
9.5
9.5*
60
60*
± 30
637
15
25.0
4.5
250
73.5
2.0
0.59
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FDP15N65
0.5
0.5
62.5
FDPF15N65
1.7
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FDP15N65 / FDPF15N65 Rev. A
www.fairchildsemi.com