|
FDP150N10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET100V, 57A, 15mΩ | |||
|
July 2008
FDP150N10
N-Channel PowerTrench® MOSFET
tm
100V, 57A, 15mâ¦
Features
⢠RDS(on) = 12m⦠( Typ.) @ VGS = 10V, ID = 49A
⢠Fast switching speed
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(on)
⢠High power and current handling capability
⢠RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
⢠DC to DC convertors / Synchronous Rectification
D
G
GDS
TO-220
FDP Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
Ratings
1.13
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
1
FDP150N10 Rev. A
www.fairchildsemi.com
|
▷ |