FDP10N50F Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 9A, 0.85Ω

FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
• R_DS(on) = 0.71Ω ( Typ.) @ V_GS = 10V, I_D = 4.5A
• Low Gate Charge ( Typ. 18nC)
• Low C_rss ( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
January 2009
UniFET^TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP10N50F FDPF10N50FT
500
±30
9
9*
5.4
5.4*
36
36*
364
9
12.5
20
125
42
1.0
0.33
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FDP10N50F
1.0
62.5
FDPF10N50FT
3.0
62.5
Units
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDP10N50F / FDPF10N50FT Rev. A
www.fairchildsemi.com