FDP085N10A-F102 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ

FDP085N10A_F102
N-Channel PowerTrench^® MOSFET
100 V, 96 A, 8.5 mΩ
March 2013
Features
• R_DS(on) = 7.35 mΩ ( Typ.)@ V_GS = 10 V, I_D = 96 A
• Fast Switching Speed
• Low Gate Charge, Q_G = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor^®’s advance PowerTrench^® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
(Note 1)
(Note 2)
(Note 3)
FDP085N10A_F102
100
±20
96
68
384
269
6.0
188
1.25
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP085N10A_F102
0.8
62.5
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDP085N10A_F102 Rev. C0
www.fairchildsemi.com