FDP045N10A Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 164A, 4.5m

July 2011
FDP045N10A_F102 / FDI045N10A_F102
N-Channel PowerTrench^® MOSFET
100V, 164A, 4.5mΩ
Features
• R_DS(on) = 3.8mΩ ( Typ.)@ V_GS = 10V, I_D = 100A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
D
G DS
TO-220
GDS
G
I²-PAK
FDI Series
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon LImited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDP045N10A_F102
FDI045N10A_F102
100
±20
164*
116
120
656
637
6.0
263
1.75
-55 to +175
300
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.57
62.5
Units
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDP045N10A_F102 / FDI045N10A_F102 Rev. A1
www.fairchildsemi.com