FDP030N06B Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 195A, 3.1m

FDP030N06B_F102
N-Channel PowerTrench^® MOSFET
60V, 195A, 3.1mΩ
September 2012
Features
• R_DS(on) = 2.67mΩ ( Typ.) @ V_GS = 10V, I_D = 100A
• Low FOM R_DS(on)*Q_G
• Low reverse recovery charge, Q_rr
• Soft reverse recovery body diode
• Enables highly efficiency in synchronous rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tailored
to minimize the on-state resistance while maintaining superior
switching performance.
Application
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• DC motor drives and Uninterruptible Power Supplies
D
G
D
S
TO-220
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FDP030N06B_F102
60
±20
195*
138*
120
780
600
6.0
205
1.37
-55 to +175
300
FDP030N06B_F102
0.73
62.5
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDP030N06B_F102 Rev.C0
www.fairchildsemi.com