FDP023N08B Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

FDP023N08B
N-Channel PowerTrench^® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• R_DS(on) = 1.96 mΩ ( Typ.) @ V_GS = 10 V, I_D = 75 A
• Low FOM R_DS(on)*Q_G
• Low Reverse Recovery Charge, Q_rr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench^® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• DC motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverte
D
GDS
TO-220
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120A.
FDP023N08B_F102
75
±20
242*
171*
120
968
961
6
245
1.64
-55 to +175
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP023N08B_F102
0.61
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2013 Fairchild Semiconductor Corporation
1
FDP023N08B Rev. C3
www.fairchildsemi.com