FDN86246 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

December 2010
FDN86246
N-Channel PowerTrench^® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
„ Max r_DS(on) = 261 m: at V_GS = 10 V, I_D = 1.6 A
„ Max r_DS(on) = 359 m: at V_GS = 6 V, I_D = 1.4 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Application
„ PD Switch
„ 100% UIL tested
„ RoHS Compliant
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
1.6
6
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
75
(Note 1a)
80
°C/W
Device Marking
246
Device
FDN86246
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDN86246 Rev.C
www.fairchildsemi.com