FDN5630 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

March 2000
FDN5630
60V N-Channel PowerTrench^ MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low R_DS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
R_DS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
• DC/DC converter
• Motor drives
• 1.7 A, 60 V. R_DS(ON) = 0.100 Ω @ V_GS = 10 V
R_DS(ON) = 0.120 Ω @ V_GS = 6 V.
• Optimized for use in high frequency DC/DC converters.
• Low gate charge.
• Very fast switching.
• SuperSOT^TM - 3 provides low R_DS(ON) in SOT23 footprint.
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings T_A = 25 C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
5630
FDN5630
7
G
S
Ratings
60
±20
1.7
10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5630 Rev. C