FDN5618P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V P-Channel Logic Level PowerTrench MOSFET

July 2000
PRELIMINARY
FDN5618P
60V P-Channel Logic Level PowerTrench^ MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V
RDS(ON) = 0.230 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Maximum Power Dissipation
PD
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
618
FDN5618P
7’’
G
S
Ratings
–60
±20
–1.25
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5618P Rev B(W)