FDN372S Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

September 2002
FDN372S
30V N-Channel PowerTrench^ SyncFET^™
General Description
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Applications
• DC-DC Converter
• Motor Drives
Features
• 2.6 A, 30 V.
RDS(ON) = 40 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
D
D
S
SuperSOT^TM-3
G
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
372
FDN372S
7’’
2002 Fairchild Semiconductor Corporation
Ratings
30
± 16
2.6
10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN372S Rev C(W)