FDN360P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single P-Channel PowerTrenchTM MOSFET

February 1999
FDN360P
Single P-Channel PowerTrench^TM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• -2 A, -30 V. R_DS(on) = 0.080 Ω @ V_GS = -10 V
R_DS(on) = 0.125 Ω @ V_GS = -4.5 V.
• Low gate charge (5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
360
FDN360P
7’’
G
S
Ratings
-30
±²⁰
-2
-20
0.5
0.46
-55 to +150
Units
V
V
A
W
°^C
250
°^C/W
75
°^C/W
Tape Width
8mm
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDN360P Rev. D