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FDN352AP_0508 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel, PowerTrench MOSFET | |||
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August 2005
FDN352AP
Single P-Channel, PowerTrench® MOSFET
Features
â â1.3 A, â30V
â1.1 A, â30V
RDS(ON) = 180 m⦠@ VGS = â10V
RDS(ON) = 300 m⦠@ VGS = â4.5V
â High performance trench technology for extremely low
RDS(ON).
â High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
â Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
D
S
G
SuperSOTâ¢-3
D
G
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1b)
R θ JA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
â30
±25
â1.3
â10
0.5
0.46
â55 to +150
250
75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7ââ
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDN352AP Rev. C1
www.fairchildsemi.com
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