FDN352AP Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel, PowerTrench

April 2005
FDN352AP
Single P-Channel, PowerTrench^® MOSFET
Features
■ –1.3 A, –30V
–1.1 A, –30V
R_DS(ON) = 180 mΩ @ V_GS = –10V
R_DS(ON) = 300 mΩ @ V_GS = –4.5V
■ High performance trench technology for extremely low
R_DS(ON).
■ High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
■ Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
D
S
G
SuperSOT™-3
D
G
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1b)
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
–30
±25
–1.3
–10
0.5
0.46
–55 to +150
250
75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7’’
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDN352AP Rev. C
www.fairchildsemi.com