FDN340P_07 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrench®MOSFET

September 200
February 2007
FDN340P
SingleP-Channel, LogicLevel, PowerTrench^® MOSFET
GeneralDescription
This P-Channel Logic Level MOSFET is produced
usingFairchildSemiconductor advancedPower Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications:load switching and power management,
batterychargingcircuits,andDC/DC conversion.
Features
• –2A,20 V
RDS(ON)=70 mΩ @ VGS =–4.5 V
RDS(ON)=110 mΩ @ VGS =–2.5 V
• Low gate charge (7.2 nC typical).
• Highperformance trenchtechnology for extremely
low RDS(ON).
• Highpower versionofindustryStandardSOT-23
package. Identical pin-out to SOT-23with30%
higher power handling capability.
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AbsoluteM axim um Ratings TA=25^oC unlessotherwise noted
Sym bol
VDSS
V GSS
ID
PD
TJ,TSTG
Param eter
Drain-Source Voltage
Gate-Source Voltage
DrainCurrent – Continuous
(Note 1a)
– Pulsed
Power Dissipationfor Single Operation
(Note 1a)
(Note 1b)
OperatingandStorage JunctionTemperature Range
Therm alCharacteristics
RθJA
Thermal Resistance,Junction-to-Ambient
RθJ C
Thermal Resistance,Junction-to-Case
(Note 1a)
(Note 1)
PackageMarking and Ordering Inform ation
Device M arking
Device
ReelSize
340
FDN340P
7’’
©2007 Fairchild Semiconductor Corporation
D
G
S
Ratings
–20
±8
–2
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN340P Rev E1