FDN336P_05 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel 2.5V Specified PowerTrench MOSFET

January 2005
FDN336P
Single P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
Features
• –1.3 A, –20 V. R_DS(ON) = 0.20 Ω @ V_GS = –4.5 V
R_DS(ON) = 0.27 Ω @ V_GS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
low R_DS(ON)
• SuperSOT^TM -3 provides low R_DS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
D
D
S
SuperSOT^TM-3
G
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
336
FDN336P
7’’
G
S
Ratings
–20
±8
–1.3
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDN306P Rev D