FDN335N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrenchTM MOSFET

April 1999
FDN335N
N-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Load switch
Features
• 1.7 A, 20 V. R_DS(ON) = 0.07 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.100 Ω @ V_GS = 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
335
FDN335N
7’’
©1999 Fairchild Semiconductor Corporation
G
S
Ratings
20
±⁸
1.7
8
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
FDN335N Rev. C