FDN327N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel 1.8 Vgs Specified PowerTrench MOSFET

October 2001
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench^® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• 2 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 80 mΩ @ VGS = 2.5 V
RDS(ON) = 120 mΩ @ VGS = 1.8 V
• Low gate charge (4.5 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
D
D
S
SuperSOT^TM-3
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
327
FDN327N
7’’
G
S
Ratings
20
±8
2
8
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDN327N Rev C (W)