FDN308P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOT^TM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOT^TM-3
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Maximum Power Dissipation
PD
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
308
FDN308P
7’’
G
S
Ratings
–20
±12
–1.5
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDN308P Rev B(W)