FDMS8888 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

July 2011
FDMS8888
NNNN
N-Channel PowerTrench^® MOSFET
30 V, 21 A, 9.5 m:
Features
General Description
„ Max r_DS(on) = 9.5 m: at V_GS = 10 V, I_D = 13.5 A
„ Max r_DS(on) = 14.5 m: at V_GS = 4.5 V, I_D = 10.9 A
„ Advanced Package and Silicon combination
for low r_DS(on) and high efficiency
The FDMS8888 ^{has been designed to minimize losses in} power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance.
„ MSL1 robust package design
„ RoHS Compliant
Applications
„ Synchronous Buck for Notebook Vcore and Server
„ Notebook Battery Pack
„ Load Switch
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Drain to Source Voltage
Parameter
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D5
D6
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
4G
3S
2S
1S
Ratings
30
±20
21
51
13.5
80
54
42
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.3
(Note 1a)
50
°C/W
Device Marking
8888
Device
FDMS8888
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS8888 Rev.C
www.fairchildsemi.com