FDMS8690_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30V, 27A, 9.0mΩ

February 2007
FDMS8690
N-Channel Power Trench^® MOSFET
tm
30V, 27A, 9.0mΩ
Features
General Description
„ Max r_DS(on) = 9.0mΩ at V_GS = 10V, I_D = 14.0A
„ Max r_DS(on) = 12.5mΩ at V_GS = 4.5V, I_D = 11.5A
„ High performance trench technology for extremely low r_DS(on)
and gate charge
„ Minimal Qgd (2.9nC typical)
„ RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r_DS(on) has been maintained to
provide an extremely versatile device.
Application
„ High Efficiency DC-DC converters.
„ Notebook CPU power supply
„ Multi purpose Point of Load
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3^S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
27
52
14
100
37.8
2.5
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.3
(Note 1a)
50
°C/W
Device Marking
FDMS8690
Device
FDMS8690
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMS8690 Rev.C2
www.fairchildsemi.com