FDMS8690 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

March 2006
FDMS8690
N-Channel PowerTrench^® MOSFET
30V, 19.8A, 9mΩ
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low r_DS(on) has been maintained
to provide an extremely versatile device.
Applications
„
High Efficiency DC-DC Converters
„
Notebook Vcore Power Supply
„
Multi purpose Point of Load
Features
„ Max r_DS(on) = 9.0mΩ at V_GS = 10V, I_D = 19.8A
„ Max r_DS(on) = 12.5mΩ at V_GS = 4.5V, I_D = 11.5A
„ High performance trench technology for extremely
low r_DS(on) and gate charge
„ Minimal Qgd (2.9 nC typical)
„ RoHS Compliant
PIN 1
SSSG
1234
D
MLP 5X6
DDDD
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current – Continuous
(Note 1a)
– Pulsed
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDMS8690
FDMS8690
7’’
©2006 Fairchild Semiconductor Corporation
FDMS8690 Rev B(W)
8765
Ratings
30
±20
19.8
90
2.8
1.1
–55 to +150
44
115
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
3000 units
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