FDMS8680 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ

FDMS8680
N-Channel PowerTrench^® MOSFET
30V, 35A, 7.0mΩ
Features
„ Max r_DS(on) = 7.0mΩ at V_GS = 10V, I_D = 14A
„ Max r_DS(on) = 11.0mΩ at V_GS = 4.5V, I_D = 11.5A
„ Advanced Package and Silicon combination for
low r_DS(on) and high efficiency
„ MSL1 robust package design
„ RoHS Compliant
July 2007
General Description
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance.
Applications
„ High Side for Synchronous Buck to Power Core Processor
„ Secondary Side Synchronous Rectifier
„ High Side Switch in POL DC/DC Converter
„ Oring FET/ Load Switch
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
35
63
14
100
216
50
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.5
(Note 1a)
50
°C/W
Device Marking
FDMS8680
Device
FDMS8680
Package
Power 56
Reel Size
13"
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDMS8680 Rev.C
www.fairchildsemi.com