FDMS8670S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench SyncFETTM

December 2006
FDMS8670S
N-Channel PowerTrench^® SyncFET^TM
tm
30V, 42A, 3.5mΩ
Features
General Description
„ Max r_DS(on) = 3.5mΩ at V_GS = 10V, I_D = 20A
„ Max r_DS(on) = 5.0mΩ at V_GS = 4.5V, I_D = 17A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
DD
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3G
2G
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
Device Marking
FDMS8670S
Device
FDMS8670S
Package
Power 56
Reel Size
7’’
Ratings
30
±20
42
116
20
200
78
2.5
-55 to +150
Units
V
V
A
W
°C
1.6
°C/W
50
Tape Width
12mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMS8670S Rev.C1
www.fairchildsemi.com