FDMS8670AS Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET™

October 2007
FDMS8670AS
tm
N-Channel PowerTrench^® SyncFET^TM
30V, 42A, 3.0mΩ
Features
General Description
„ Max r_DS(on) = 3.0mΩ at V_GS = 10V, I_D = 23A
„ Max r_DS(on) = 4.7mΩ at V_GS = 4.5V, I_D = 18A
„ Advanced Package and Silicon combination
for low r_DS(on) and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
42
127
23
200
384
50
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking
FDMS8670AS
Device
FDMS8670AS
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDMS8670AS Rev.B
www.fairchildsemi.com