FDMS8670 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30V, 42A, 2.6mΩ

April 2008
FDMS8670
tm
N-Channel Power Trench^® MOSFET
30V, 42A, 2.6mΩ
Features
General Description
„ Max r_DS(on) = 2.6mΩ at V_GS = 10V, I_D = 24A
„ Max r_DS(on) = 3.8mΩ at V_GS = 4.5V, I_D = 18A
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor's latest proprietary Power Trench^® process that
has been especially tailored to minimize on-resistance. This part
exhibits industry leading switching FOM (RDS*Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
„ DC - DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
135
24
150
288
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking
FDMS8670
Device
FDMS8670
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMS8670 Rev.C
www.fairchildsemi.com