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FDMS8660AS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET 30V, 49A, 2.1mΩ | |||
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October 2007
FDMS8660AS
tm
N-Channel PowerTrench® SyncFETTM
30V, 49A, 2.1mâ¦
Features
 Max rDS(on) = 2.1m⦠at VGS = 10V, ID = 28A
 Max rDS(on) = 3.1m⦠at VGS = 4.5V, ID = 22A
 Advanced Package and Silicon combination
for low rDS(on) and high efficiency
 SyncFET Schottky Body Diode
 MSL1 robust package design
 RoHS Compliant
General Description
The FDMS8660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
 Synchronous Rectifier for DC/DC Converters
 Notebook Vcore/ GPU low side switch
 Networking Point of Load low side switch
 Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 2)
(Note 1a)
Ratings
30
±20
49
179
28
200
726
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS8660AS
Device
FDMS8660AS
Package
Power 56
Reel Size
13ââ
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDMS8660AS Rev.C
www.fairchildsemi.com
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