FDMS86520 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ

FDMS86520
N-Channel PowerTrench^® MOSFET
60 V, 42 A, 7.4 mΩ
Features
„ Max r_DS(on) = 7.4 mΩ at V_GS = 10 V, I_D = 14 A
„ Max r_DS(on) = 10.3 mΩ at V_GS = 8 V, I_D = 12.5 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
October 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Top
Bottom
Pin 1
S
S
S
D
S
G
S
D
Power 56
D
D
D
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
60
±20
42
74
14
80
86
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
50
°C/W
Device Marking
FDMS86520
Device
FDMS86520
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86520 Rev. C1
www.fairchildsemi.com