FDMS86252 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A

FDMS86252
N-Channel PowerTrench^® MOSFET
150 V, 16 A, 51 mΩ
August 2010
Features
General Description
„ Max r_DS(on) = 51 mΩ at V_GS = 10 V, I_D = 4.6 A
„ Max r_DS(on) = 70 mΩ at V_GS = 6 V, I_D = 3.9 A
„ Advanced package and silicon combination for low r_DS(on) and
high efficiency
„ MSL1 robust package design
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
„ RoHS Compliant
Top
Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
16
24
4.6
20
50
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
50
°C/W
Device Marking
FDMS86252
Device
FDMS86252
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMS86252 Rev.C
www.fairchildsemi.com