FDMS8622 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 100 V, 16.5 A, 56 mΩ

July 2011
FDMS8622
N-Channel Power Trench^® MOSFET
100 V, 16.5 A, 56 mΩ
Features
„ Max r_DS(on) = 56 mΩ at V_GS = 10 V, I_D = 4.8 A
„ Max r_DS(on) = 88 mΩ at V_GS = 6 V, I_D = 3.9 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Applications
„ POE Protection Switch
„ DC-DC Switch
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
DD
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
100
±20
16.5
17
4.8
30
12
31
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
4
(Note 1a)
50
°C/W
Device Marking
FDMS8622
Device
FDMS8622
Package
Power56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS8622 Rev.C
www.fairchildsemi.com