FDMS86200 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ

November 2012
FDMS86200
N-Channel Power Trench^® MOSFET
150 V, 49 A, 18 mΩ
Features
General Description
„ Max r_DS(on) = 18 mΩ at V_GS = 10 V, I_D = 9.6 A
„ Max r_DS(on) = 21 mΩ at V_GS = 6 V, I_D = 8.8 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
Application
„ DC-DC Conversion
„ RoHS Compliant
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
Power 56
D
D
D
D
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
49
9.6
100
220
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS86200
Device
FDMS86200
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86200 Rev.C3
www.fairchildsemi.com