FDMS86105 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 26A, 34milliohm

FDMS86105
N-Channel PowerTrench^® MOSFET
100 V, 26 A, 34 mΩ
January 2011
Features
General Description
„ Max r_DS(on) = 34 mΩ at V_GS = 10 V, I_D = 6 A
„ Max r_DS(on) = 54 mΩ at V_GS = 6 V, I_D = 4.5 A
„ Advanced package and silicon combination for low r_DS(on) and
high efficiency
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Primary DC-DC
„ Secondary DC-DC
„ Load Switch
Top
Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
56
26
6
30
50
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.6
(Note 1a)
50
°C/W
Device Marking
FDMS86105
Device
FDMS86105
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS86105 Rev.C
www.fairchildsemi.com