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| FDMS86103L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 49 A, 8 mΩ | |||
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FDMS86103L
N-Channel PowerTrench® MOSFET
100 V, 49 A, 8 mΩ
December 2010
Features
General Description
 Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
 Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
 Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
Application
 DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
49
81
12
100
312
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS86103L
Device
FDMS86103L
Package
Power 56
1.2
(Note 1a)
50
°C/W
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMS86103L Rev.C
www.fairchildsemi.com
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