FDMS8570S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFETTM 25 V, 60 A, 2.8 mΩ

FDMS8570S
N-Channel PowerTrench^® SyncFET^TM
April 2012
25 V, 60 A, 2.8 mΩ
Features
„ Max r_DS(on) = 2.8 mΩ at V_GS = 10 V, I_D = 24 A
„ Max r_DS(on) = 3.3 mΩ at V_GS = 4.5 V, I_D = 22 A
„ High performance technology for extremely low r_DS(on)
„ SyncFET^TM Schottky Body Diode
„ RoHS Compliant
General Description
This N-Channel SyncFET^TM is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest r_DS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Top
Bottom
Pin 1
S
D₅
S
S
G
D₆
Power 56
D
D
D
D
D₇
D8
4G
3S
2S
1^S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
60
24
100
45
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
Thermal Resistance, Junction to Case
T_C = 25 °C
2.6
R_θJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
Package Marking and Ordering Information
°C/W
Device Marking
10OD
Device
FDMS8570S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS8570S Rev.D1
www.fairchildsemi.com