FDMS8320L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40 V, 100 A, 1.1 mΩ

June 2012
FDMS8320L
N-Channel PowerTrench^® MOSFET
40 V, 100 A, 1.1 mΩ
Features
„ Max r_DS(on) = 1.1 mΩ at V_GS = 10 V, I_D = 32 A
„ Max r_DS(on) = 1.5 mΩ at V_GS = 4.5 V, I_D = 27 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r_DS(on), fast switching speed ang body
diode reverse recovery performance.
Applications
„ OringFET / Load Switching
„ Synchronous Rectification
„ DC-DC Conversion
Top
Pin 1
Bottom
Pin 1
S
S
S
D
S
G
S
D
Power 56
D
D
D
D
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
100
238
36
150
264
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS8320L
Device
FDMS8320L
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS8320L Rev.C3
www.fairchildsemi.com