FDMS8090 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – PowerTrench® Power Stage 100 V Symmetric Dual N-Channel MOSFET

September 2012
FDMS8090
PowerTrench^® Power Stage
100 V Symmetric Dual N-Channel MOSFET
Features
General Description
„ Max r_DS(on) = 13 mΩ at V_GS = 10 V, I_D = 10 A
„ Max r_DS(on) = 20 mΩ at V_GS = 6 V, I_D = 8 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
This device includes two fast switching (Qgd minimized) 100V
N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP)
package. The package is enhanced for exceptional thermal
performance.
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Bridge Topologies
„ Synchronous Rectifier Pair
„ Motor Drives
Top
Pin 1
Bottom
S2 S2 S2 G2
D2
D1
Power 56
S1 S1 S1 G1 Pin 1
G1 ₁
S1 ₂
S1 3
S1 4
Contact to D1 Contact to D2
(backside) (backside)
Q1
Q2
8 ^G2
7 ^S2
6 S2
5 S2
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
40
10
120
253
59
2.2
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.1
(Note 1a)
55
°C/W
Device Marking
FDMS8090
Device
FDMS8090
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS8090 Rev.C
www.fairchildsemi.com