FDMS7680 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ

FDMS7680
N-Channel PowerTrench^® MOSFET
30 V, 6.9 mΩ
Features
General Description
April 2009
„ Max r_DS(on) = 6.9 mΩ at V_GS = 10 V, I_D = 14 A
„ Max r_DS(on) = 11 mΩ at V_GS = 4.5 V, I_D = 11 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
3.7
(Note 1a)
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMS7680 Rev.C
www.fairchildsemi.com