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FDMS7680 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ | |||
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FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 mâ¦
Features
General Description
April 2009
 Max rDS(on) = 6.9 m⦠at VGS = 10 V, ID = 14 A
 Max rDS(on) = 11 m⦠at VGS = 4.5 V, ID = 11 A
 Advanced Package and Silicon combination for low rDS(on)
and high efficiency
 Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
 IMVP Vcore Switching for Notebook
 VRM Vcore Switching for Desktop and Server
 OringFET / Load Switch
 DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
3.7
(Note 1a)
50
°C/W
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMS7680 Rev.C
www.fairchildsemi.com
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