FDMS7678 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ

April 2012
FDMS7678
N-Channel Power Trench^® MOSFET
30 V, 26 A, 5.5 mΩ
Features
General Description
„ Max r_DS(on) = 5.5 mΩ at V_GS = 10 V, I_D = 17.5 A
„ Max r_DS(on) = 6.8 mΩ at V_GS = 4.5 V, I_D = 15 A
„ High performance technology for extremely low r_DS(on)
„ Termination is Lead-free
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top
Pin 1
Bottom
Pin 1
S
S
S
D
S
G
S
D
S
D
D
D
G
D
D
D
Power 56
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 4)
(Note 1a)
Ratings
30
±20
26
72
17.5
70
54
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
50
°C/W
Device Marking
FDMS7678
Device
FDMS7678
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS7678 Rev. C1
www.fairchildsemi.com