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FDMS7676 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench� MOSFET 30 V, 5.5 mΩ | |||
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July 2009
FDMS7676
N-Channel PowerTrench® MOSFET
30 V, 5.5 m:
Features
General Description
 Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
 Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
 Advanced Package and Silicon design for low rDS(on) and high
efficiency
 Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
 IMVP Vcore Switching for Notebook
 VRM Vcore Switching for Desktop and Server
 OringFET / Load Switch
 DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
76
16
90
72
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.6
(Note 1a)
50
°C/W
Device Marking
FDMS7676
Device
FDMS7676
Package
Power 56
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7676 RevA
www.fairchildsemi.com
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