FDMS7670AS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET 30 V, 42 A, 3 mΩ

September 2009
FDMS7670AS
N-Channel PowerTrench^® SyncFET^TM
30 V, 42 A, 3 mΩ
Features
General Description
„ Max r_DS(on) = 3.0 mΩ at V_GS = 10 V, I_D = 21 A
„ Max r_DS(on) = 3.2 mΩ at V_GS = 7 V, I_D = 19 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS7670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
Pin 1
S
D₅
S
S
G
D₆
Power 56
D
D
DD
D₇
D8
4^G
3S
2S
1^S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
dv/dt
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
MOSFET dv/dt
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
113
22
150
1.8
98
65
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7670AS
Device
FDMS7670AS
Package
Power 56
1.9
(Note 1a)
125
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7670AS Rev.C
www.fairchildsemi.com