English
Language : 

FDMS7606 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ
May 2011
FDMS7606
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A
„ Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
„ Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
MOSFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook Charger
S2
S2 S2
G2
S1/D2
D1
D1
D1
D1 G1
Top
Bottom Pin1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5 Q2
S2 6
S2 7
G2 8
4 D1
3 D1
2 D1
Q1
1 G1
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
(Note 4)
TA = 25°C
TA = 25°C
Q1
Q2
30
30
±20
±20
12
22
41
11.51a
39
121b
50
60
25
2.21a
1.01c
33
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
4.6
501b
1201d
4.7
°C/W
Device Marking
FDMS7606
Device
FDMS7606
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS7606 Rev.C
www.fairchildsemi.com
 ▷