FDMS7600AS Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ

FDMS7600AS
Dual N-Channel PowerTrench^® MOSFET
N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ
December 2009
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 7.5 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 12 mΩ at V_GS = 4.5 V, I_D = 10 A
Q2: N-Channel
„ Max r_DS(on) = 2.8 mΩ at V_GS = 10 V, I_D = 20 A
„ Max r_DS(on) = 3.3 mΩ at V_GS = 4.5 V, I_D = 18 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook V_CORE
S2
S2 _S2
G2
S1/D2
D1
S2 ₅
Q2
S2 6
4 ^D1
3 D1
D1
D1
D1 _G1
Top
Bottom
Power 56
S2 ₇
G2 ₈
2 ^D1
Q1
1 ^G1
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
T_A = 25 °C
T_A = 25 °C
Q1
Q2
30
30
±20
±20
30
40
50
12^1a
120
22^1b
40
2.2^1a
1.0^1c
60
2.5^1b
1.0^1d
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
57^1a
125^1c
3.5
50^1b
120^1d
2
°C/W
Device Marking
FDMS7600AS
Device
FDMS7600AS
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7600AS Rev.C
www.fairchildsemi.com