FDMS7580 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 25 V, 7.5 mΩ

December 2009
FDMS7580
N-Channel Power Trench^® MOSFET
25 V, 7.5 mΩ
Features
General Description
„ Max r_DS(on) = 7.5 mΩ at V_GS = 10 V, I_D = 15 A
„ Max r_DS(on) = 11.1 mΩ at V_GS = 4.5 V, I_D = 12 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery
„ MSL1 robust package design
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Control MOSFET for Synchronous Buck Converters
„ 100% UIL tested
„ Notebook
„ RoHS Compliant
„ Server
„ Telecomm
„ High Efficiency DC-DC Switch Mode Power Supplies
Top
Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
DD
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
28
49
15
60
32
27
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4.6
(Note 1a)
50
°C/W
Device Marking
FDMS7580
Device
FDMS7580
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7580 Rev.C
www.fairchildsemi.com